Abstract:
Films of CuxS with 430-700 nm thickness were deposited by robotic spray pyrolysis technique, at T = 300Â?C, using 90 spraying
sequences, from water:ethanol:glycerol = 7:2:1 (in volumes) solutions with a molar ratio Cu:S = 1:2.5-3.5. Relative dense,
homogenous and uniform films of CuxS (x = 1.8-2), with Eg = 1.97-2.49 eV and exhibiting electric resistance behavior were
obtained. The as-deposited films were annealed in air or in sulfur atmosphere, at 300 Â?C, for one hour. Dense and uniform films,
containing Cu2S crystalline phase, with Eg = 2.16 eV and p-type semiconductor electrical behavior, were obtained by annealing in
air of films deposited from precursors’ solutions with Cu:S = 1:3 at Cu2+ concentration of 3.5 mol/L.